Hot-carrier reliability in OPTVLD-LDMOS
采用最佳横向变掺杂技术的LDMOS中热载流子效应的研究

An improved structure that eliminates hot-carrier effects (HCE) in optimum variation lateral doping (OPTVLD) LDMOS is proposed. A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide. However, the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process, and thereby reduces HCE significantly.