%0 Journal Article
%T Hot-carrier reliability in OPTVLD-LDMOS<br>采用最佳横向变掺杂技术的LDMOS中热载流子效应的研究
%A Cheng Junji
%A Chen Xingbi
%A <br>程骏骥
%A 陈星弼
%J 半导体学报
%D 2012
%I 
%X An improved structure that eliminates hot-carrier effects (HCE) in optimum variation lateral doping (OPTVLD) LDMOS is proposed. A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide. However, the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process, and thereby reduces HCE significantly.
%K hot-carrier effects
%K OPTVLD LDMOS
%K surface electric field intensity<br>热载流子效应
%K 最佳横向变掺杂技术
%K 表面电场强度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=649CF1A01F52D571EAF3B83E6B7811DE&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=B31275AF3241DB2D&sid=67F2070E7C6DECBA&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12