Threshold Voltage Model for a Fully Depleted SOI-MOSFETwith a Non-Uniform Profile
一种非均匀掺杂的全耗尽SOI-MOSFET阈值电压模型

A novel approximation of the two-dimensional (2D) potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.The model agrees well with numerical simulation by MEDICI.The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted (FD) SOI devices in practice.