%0 Journal Article
%T Threshold Voltage Model for a Fully Depleted SOI-MOSFETwith a Non-Uniform Profile<br>一种非均匀掺杂的全耗尽SOI-MOSFET阈值电压模型
%A Zhang Guohe
%A Shao Zhibiao
%A Zhou Kai
%A <br>张国和
%A 邵志标
%A 周凯
%J 半导体学报
%D 2007
%I 
%X A novel approximation of the two-dimensional (2D) potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.The model agrees well with numerical simulation by MEDICI.The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted (FD) SOI devices in practice.
%K fully depleted SOI-MOSFET
%K non-uniform
%K surface potential
%K threshold voltage<br>全耗尽SOI-MOSFET
%K 非均匀掺杂
%K 表面势
%K 阈值电压
%K fully
%K depleted
%K SOI-MOSFET
%K non-uniform
%K surface
%K potential
%K threshold
%K voltage
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1C65B0D67FA6A4B1&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=B31275AF3241DB2D&sid=043C7D0F3F6AC1B3&eid=BCCCE1B88B87184D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11