Raman Online Measurement of Stress Resulting from Micromachining
微加工工艺应力的喇曼在线测量

Micromachining can result in residual stress in a wafer.This paper puts forward an online measuring method for measuring the stress in silicon samples prepared with three common micromachining processes:deposition,etching,and bonding.The experimental results support the theory.In deposition processes,the residual stress resulting from Si3N4,which is tensile stress,is larger than SiO2,which is compressive stress.The tensile stress resulting from etching and bonding processes is relatively larger with a maximum value over 300MPa.