%0 Journal Article
%T Raman Online Measurement of Stress Resulting from Micromachining<br>微加工工艺应力的喇曼在线测量
%A Sang Shengbo
%A Xue Chenyang
%A Zhang Wendong
%A Xiong Jijun
%A Ruan Yong
%A Zhang Dacheng
%A Hao Yilong
%A <br>桑胜波
%A 薛晨阳
%A 张文栋
%A 熊继军
%A 阮勇
%A 张大成
%A 郝一龙
%J 半导体学报
%D 2006
%I 
%X Micromachining can result in residual stress in a wafer.This paper puts forward an online measuring method for measuring the stress in silicon samples prepared with three common micromachining processes:deposition,etching,and bonding.The experimental results support the theory.In deposition processes,the residual stress resulting from Si3N4,which is tensile stress,is larger than SiO2,which is compressive stress.The tensile stress resulting from etching and bonding processes is relatively larger with a maximum value over 300MPa.
%K micromachining
%K residual stress
%K Raman
%K online-measurement<br>微加工工艺
%K 残余应力
%K 喇曼
%K 在线测量
%K 微加工工艺
%K 工艺应力
%K 喇曼
%K 在线测量
%K Micromachining
%K Stress
%K Online
%K Measurement
%K 最大值
%K 应力分布
%K 键合工艺
%K 刻蚀工艺
%K 张应力
%K 压应力
%K 硅衬底
%K 氧化硅
%K 应力比
%K 硅片
%K 氮化硅
%K 淀积工艺
%K 分析
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AFBA346BE02E57D4&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=B31275AF3241DB2D&sid=39B73ADA6F3DD05F&eid=D542ADE6529F4059&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13