Fabrication of Silicon Photoelectric Detector with Visibility Curve Using Ion Implantation and Rapid Thermal Annealing
离子注入快速热退火制造类视见函数光电探测器

The fabrication of silicon photoelectric detector by ion implantation and infrared rapidthermal annealing is reported. Teh effect of damage elimination is evaluated by Raman scatteringmethod, and the optimal annealing temperature is found. By means of intrinsic getteringand other techniques, it is easy to get excellent photoelectric detector with spectral sensitivityclosed to the human visibility curve.