%0 Journal Article
%T Fabrication of Silicon Photoelectric Detector with Visibility Curve Using Ion Implantation and Rapid Thermal Annealing<br>离子注入快速热退火制造类视见函数光电探测器
%A Zheng Guoxiang/
%A <br>郑国祥
%A 邬建根
%A 王昌平
%A 朱景兵
%A 屈逢源
%A 周寿通
%J 半导体学报
%D 1990
%I 
%X The fabrication of silicon photoelectric detector by ion implantation and infrared rapidthermal annealing is reported. Teh effect of damage elimination is evaluated by Raman scatteringmethod, and the optimal annealing temperature is found. By means of intrinsic getteringand other techniques, it is easy to get excellent photoelectric detector with spectral sensitivityclosed to the human visibility curve.
%K ion implantation
%K Rapid thermal annealing
%K Visibility curve silicon photodetector
%K Intrinsic gettering<br>光电探测器
%K 离子注入
%K 热退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=69ADEA179A3F6F11&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=BD77137A0285B6FF&eid=9BA5B7BDD4CE0596&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=5