Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors
金属单向诱导横向晶化激光修饰多晶硅薄膜晶体管

Post-treated metal-induced unilaterally crystallized(MIUC) poly-Si technology using a triple frequency YAG solid-state laser is discussed in detail.It is found that MIUC TFT has good performance and uniformity.By using the triple frequency YAG laser post-treatment,the performance of the MIUC TFT can be further enhanced.The field-mobility of the MIUC TFT increases almost by a factor of two. In addition,the improvement of the performance and the uniformity of the post-treated TFTs are correlated to the modified laser condition and vary regularly,which implies that the laser post-treatment is controllable.This provides a foundation for industrialization.