%0 Journal Article
%T Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors<br>金属单向诱导横向晶化激光修饰多晶硅薄膜晶体管
%A Meng Zhiguo
%A Wong Man
%A Wu Chuny
%A Li Juan
%A Kwok H S
%A Xiong Shaozhen
%A Zhang Fang
%A <br>孟志国
%A 王文
%A 吴春亚
%A 李娟
%A 郭海成
%A 熊绍珍
%A 张芳
%J 半导体学报
%D 2006
%I 
%X Post-treated metal-induced unilaterally crystallized(MIUC) poly-Si technology using a triple frequency YAG solid-state laser is discussed in detail.It is found that MIUC TFT has good performance and uniformity.By using the triple frequency YAG laser post-treatment,the performance of the MIUC TFT can be further enhanced.The field-mobility of the MIUC TFT increases almost by a factor of two. In addition,the improvement of the performance and the uniformity of the post-treated TFTs are correlated to the modified laser condition and vary regularly,which implies that the laser post-treatment is controllable.This provides a foundation for industrialization.
%K :metal-induced unilateral crystallization
%K polycrystalline silicon TFT
%K triple frequency solid-state laser
%K laser post-treatment<br>金属单向诱导横向晶化
%K 多晶硅薄膜晶体管
%K 三倍频YAG固体激光器
%K 激光修饰
%K 金属单向诱导横向晶化
%K 激光退火
%K 修饰性
%K 多晶硅薄膜晶体管
%K Transistors
%K Silicon
%K Thin
%K Film
%K Polycrystalline
%K 工业化技术
%K 规律
%K 相关
%K 处理条件
%K 参数
%K 器件性能
%K 场效应迁移率
%K 三倍频
%K 均匀性
%K 研究
%K 退火技术
%K 激光后
%K 结合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5F125D5535F74331&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=F3090AE9B60B7ED1&sid=4505D95D28DD2BA2&eid=7E679D7D57BC5B35&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14