Characteristics of GaN grown on 6H-SiC with different AlN buffers
6H-SiC衬底上采用不同厚度AlN缓冲层对GaN外延层的影响

Characteristics of GaN grown on 6H-SiC (0001) substrates using different thicknesses of AlN buffers are studied. It is found that the surface morphology and crystal quality of GaN film closely depends on the strain state of the AlN buffer. For a thicker AlN buffer, there are cracks on GaN surface, which make the GaN films unsuitable for applications. While for a thinner AlN buffer, more dislocations are produced in the GaN film, which deteriorates the performance of GaN. Possible generation mechanisms of cracks and more dislocations are investigated and a 100 nm AlN buffer is suggested to be a better choice for high quality GaN on SiC.