%0 Journal Article
%T Characteristics of GaN grown on 6H-SiC with different AlN buffers<br>6H-SiC衬底上采用不同厚度AlN缓冲层对GaN外延层的影响
%A Ding Guojian
%A Guo Liwei
%A Xing Zhigang
%A Chen Yao
%A Xu Peiqiang
%A Jia Haiqiang
%A Zhou Junming
%A Chen Hong
%A <br>丁国建
%A 郭丽伟
%A 邢志刚
%A 陈耀
%A 徐培强
%A 贾海强
%A 周均铭
%A 陈弘
%J 半导体学报
%D 2010
%I 
%X Characteristics of GaN grown on 6H-SiC (0001) substrates using different thicknesses of AlN buffers are studied. It is found that the surface morphology and crystal quality of GaN film closely depends on the strain state of the AlN buffer. For a thicker AlN buffer, there are cracks on GaN surface, which make the GaN films unsuitable for applications. While for a thinner AlN buffer, more dislocations are produced in the GaN film, which deteriorates the performance of GaN. Possible generation mechanisms of cracks and more dislocations are investigated and a 100 nm AlN buffer is suggested to be a better choice for high quality GaN on SiC.
%K GaN
%K AlN
%K XRD
%K MOCVD<br>氮化镓，
%K 氮化铝，
%K X射线衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DC4C373394143CB70042C1D40A5B59DA&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=B513F60CAE5DBACB&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0