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半导体学报 2008
A Forecast Technique for Radiation-Resistant Capability on MOSFETs
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Abstract:
Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation,a forecast model of radiation-resistant capability is established.This model can preferably forecast post-irradiation threshold voltage drift due to oxide traps and interface traps through the pre-irradiation 1/f noise parameter.The simulation results of the model agree well with the measurement results.The forecast model is validated.The model provides a forecast technique for radiation-resistant capability on MOSFETs for engineering applications.
