%0 Journal Article
%T A Forecast Technique for Radiation-Resistant Capability on MOSFETs<br>MOSFET抗辐照能力预测方法
%A Peng Shaoquan
%A Du Lei
%A Zhuang Yiqi
%A Bao Junlin
%A Liu Jiang
%A Su Yahui
%A <br>彭绍泉
%A 杜磊
%A 庄奕琪
%A 包军林
%A 刘江
%A 苏亚慧
%J 半导体学报
%D 2008
%I 
%X Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation,a forecast model of radiation-resistant capability is established.This model can preferably forecast post-irradiation threshold voltage drift due to oxide traps and interface traps through the pre-irradiation 1/f noise parameter.The simulation results of the model agree well with the measurement results.The forecast model is validated.The model provides a forecast technique for radiation-resistant capability on MOSFETs for engineering applications.
%K 1/f noise
%K MOSFET
%K radiation
%K forecast<br>1/f噪声
%K MOSFET
%K 辐照
%K 预测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6BA1386237C4D7C8652EF4FBAC750EE3&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=35D8C930A8A0D2C6&eid=A268BE393F034483&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13