A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation
电离辐射中SOI MOSFETs的背栅异常kink效应研究

Total dose irradiation effects of partially depleted SOI MOSFETs are studied under 10keV X-ray exposure.Results show that the front-gate characteristics do not change significantly during irradiation.An anomalous kink is observed in the back-gate logarithmic curve of both nMOS and pMOS,which is attributed to charged traps at the buried oxide/top silicon (BOX/SOI) interface during irradiation.Two-dimensional numerical simulation using MEDICI supports this conclusion.