%0 Journal Article
%T A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation<br>电离辐射中SOI MOSFETs的背栅异常kink效应研究
%A Liu Jie
%A Zhou Jicheng
%A Luo Hongwei
%A Kong Xuedong
%A En Yunfei
%A Shi Qian
%A He Yujuan
%A Lin Li
%A <br>刘洁
%A 周继承
%A 罗宏伟
%A 孔学东
%A 恩云飞
%A 师谦
%A 何玉娟
%A 林丽
%J 半导体学报
%D 2008
%I 
%X Total dose irradiation effects of partially depleted SOI MOSFETs are studied under 10keV X-ray exposure.Results show that the front-gate characteristics do not change significantly during irradiation.An anomalous kink is observed in the back-gate logarithmic curve of both nMOS and pMOS,which is attributed to charged traps at the buried oxide/top silicon (BOX/SOI) interface during irradiation.Two-dimensional numerical simulation using MEDICI supports this conclusion.
%K X-ray
%K SOI MOSFETs
%K partially depleted
%K kink effect
%K total-dose irradiation<br>X射线
%K SOI
%K MOSFETs
%K 部分耗尽
%K kink效应
%K 总剂量效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A7616766039DD596C83B1E5C78F0E2E5&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=EB552E4CFC85690B&eid=04445C1D2BDA24EE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10