Piezoresistive Properties of Resonant Tunneling Diodes
共振隧穿二极管的压阻特性测试与研究

This paper reports the piezoresistive properties of resonant tunneling diodes (RTDs) as detected with a newly established testing system.The shifts of their I-V characteristics in different stress states are detected,demonstrating that the RTDs possess piezoresistive properties.The sensitivity of the RTDs is larger than 1E-8Pa-1.Moreover,to accurately illustrate the piezoresistive properties of RTD,the I-V characteristic coherence of an RTD is tested.According to the experimental results,the largest relative resistance shift of an RTD in the same environmental condition is less than 3%,1% of which is caused by the testing instrument.