%0 Journal Article
%T Piezoresistive Properties of Resonant Tunneling Diodes<br>共振隧穿二极管的压阻特性测试与研究
%A Mao Haiyang
%A Xiong Jijun
%A Zhang Wendong
%A Xue Chenyang
%A Sang Shengbo
%A Bao Aida
%A <br>毛海央
%A 熊继军
%A 张文栋
%A 薛晨阳
%A 桑胜波
%A 鲍爱达
%J 半导体学报
%D 2006
%I 
%X This paper reports the piezoresistive properties of resonant tunneling diodes (RTDs) as detected with a newly established testing system.The shifts of their I-V characteristics in different stress states are detected,demonstrating that the RTDs possess piezoresistive properties.The sensitivity of the RTDs is larger than 1E-8Pa-1.Moreover,to accurately illustrate the piezoresistive properties of RTD,the I-V characteristic coherence of an RTD is tested.According to the experimental results,the largest relative resistance shift of an RTD in the same environmental condition is less than 3%,1% of which is caused by the testing instrument.
%K resonant tunneling diode
%K piezoresistive property
%K coherence
%K sensitivity
%K Raman spectrum<br>共振隧穿二极管
%K 压阻特性
%K 一致性
%K 灵敏度
%K 喇曼光谱
%K 共振隧穿二极管
%K 压阻特性
%K 特性测试
%K 研究
%K Resonant
%K Tunneling
%K Diodes
%K 测试仪器
%K 漂移量
%K 电阻
%K 环境条件
%K 一致性
%K 定量表达
%K 灵敏度
%K 结果
%K 实验系统
%K 特性曲线
%K 应力状态
%K 结构
%K 检测
%K 设计
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=03A8028FE159CA52&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=F3090AE9B60B7ED1&sid=2FA47D7E22372F11&eid=3F94E028184E4B65&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12