H-plasma-assisted aluminum induced crystallization of amorphous silicon
氢等离子体辅助铝诱导晶化非晶硅的研究

A technique to improve and accelerate aluminum induced crystallization (AIC) by using hydrogen plasma is proposed. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm2/(V·S). The possible mechanism of AIC assisted by hydrogen radicals is also discussed.