%0 Journal Article
%T H-plasma-assisted aluminum induced crystallization of amorphous silicon<br>氢等离子体辅助铝诱导晶化非晶硅的研究
%A Li Juan
%A Liu Ning
%A Luo Chong
%A Meng Zhiguo
%A Xiong Shaozhen
%A Hoi Sing Kwok
%A <br>李娟
%A 刘宁
%A 罗翀
%A 孟志国
%A 熊绍珍
%A Hoi Sing Kwok
%J 半导体学报
%D 2012
%I 
%X A technique to improve and accelerate aluminum induced crystallization (AIC) by using hydrogen plasma is proposed. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm2/(V·S). The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
%K poly-silicon
%K H-plasma
%K aluminum induced crystallization<br>多晶硅，氢等离子体，铝诱导晶化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=649CF1A01F52D5712CE704D8444AEC90&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=B31275AF3241DB2D&sid=C0A205E80C12E76E&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16