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半导体学报 2001
Breakdown Characteristics of Nitride Ultra-Thin Gate Oxide
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Abstract:
The breakdown characteristics of N 2O nitride ultra thin gate oxide are investigated.The experimental data show that with N introduced into thermal SiO 2 oxide,the breakdown characteristics of thin gate oxide are much improved.The characteristics of ultra thin gate oxide can also be improved by N,because N can decrease the oxide charges and interface states induced during the process.
