%0 Journal Article
%T Breakdown Characteristics of Nitride Ultra-Thin Gate Oxide<br>含N超薄栅氧化层的击穿特性
%A HAN De dong
%A ZHANG Guo qiang
%A REN Di yuan
%A <br>韩德栋
%A 张国强
%A 任迪远
%J 半导体学报
%D 2001
%I 
%X The breakdown characteristics of N 2O nitride ultra thin gate oxide are investigated.The experimental data show that with N introduced into thermal SiO 2 oxide,the breakdown characteristics of thin gate oxide are much improved.The characteristics of ultra thin gate oxide can also be improved by N,because N can decrease the oxide charges and interface states induced during the process.
%K N
%K ultra
%K thin gate oxide
%K breakdown characteristics<br>含N
%K 超薄栅氧化层
%K 击穿特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=39E1554B011C6302&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=098F5970044D8583&eid=C700F38C49C581D7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=9