Experimental Research on Breakdown Characteristics of Thin Gate Oxide
薄栅氧化层击穿特性的实验研究

Breakdown characteristics of thin gate oxide are tested under constant current stresses, breakdown theories of TDDB are researched and effects from area of gate oxide to breakdown characteristics are discussed. The charge to breakdown Q BD is tested and the results show: the charge to breakdown Q BD is dependent on stressed current density and area of gate oxide. An analytical expression of Q BD is educed and relative parameters are fitted.