%0 Journal Article
%T Experimental Research on Breakdown Characteristics of Thin Gate Oxide<br>薄栅氧化层击穿特性的实验研究
%A LIU Hong-xia
%A HAO Yue
%A <br>刘红侠
%A 郝跃
%J 半导体学报
%D 2000
%I 
%X Breakdown characteristics of thin gate oxide are tested under constant current stresses, breakdown theories of TDDB are researched and effects from area of gate oxide to breakdown characteristics are discussed. The charge to breakdown Q BD is tested and the results show: the charge to breakdown Q BD is dependent on stressed current density and area of gate oxide. An analytical expression of Q BD is educed and relative parameters are fitted.
%K Breakdown
%K Gate Oxide
%K Experrment Determinat
%K Time Dependent Dielectric Breakdown<br>击穿
%K 栅氧化层
%K 实验
%K 与时间有关的介质击穿(TDDB)
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0F6D101D17668E32&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=0B39A22176CE99FB&sid=A020552C37306588&eid=2DBBF45CC176713E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=9&reference_num=5