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半导体学报 1990
AIN Films and Its Application in Optoelectronic Devices
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Abstract:
The experimental results of sputtered AlN film and its application to semiconductor op toelectronic devices are reported. The thickness, depoaition rate, refractive index and breakdown electric field of sputtered AlN films at different conditions were determined. Facet protectors, pacet antireflectors and surface passivator of devices were successfully made by using sputtered AlN film for the first time. The analysis of the experimental data of the dielectric films used in the semiconductor optoelectronic devices shows that AlN film would be widely applied in this field.