%0 Journal Article
%T AIN Films and Its Application in Optoelectronic Devices<br>AIN膜及其在半导体光电器件中的应用
%A Guo Liang/Institute of Semiconductors
%A Academia Sinica
%A Beijing Zhu Suzhen/Institute of Semiconductors
%A Academia Sinica
%A Beijing Zhang Xia/Institute of Semiconductors
%A Academia Sinica
%A Beijing Yu Jinzhong/Institute of Semiconductors
%A Academia Sinica
%A Beijing Wang Dehuang/
%A <br>郭良
%A 朱素珍
%A 张霞
%A 余金中
%A 王德煌
%J 半导体学报
%D 1990
%I 
%X The experimental results of sputtered AlN film and its application to semiconductor op toelectronic devices are reported. The thickness, depoaition rate, refractive index and breakdown electric field of sputtered AlN films at different conditions were determined. Facet protectors, pacet antireflectors and surface passivator of devices were successfully made by using sputtered AlN film for the first time. The analysis of the experimental data of the dielectric films used in the semiconductor optoelectronic devices shows that AlN film would be widely applied in this field.
%K AIN
%K Semiconductor optoelectronic devices<br>半导体
%K 光电器件
%K AIN膜
%K 氮化铝
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6DCCDC56555428D1&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=5E191A234CD3698F&eid=A1BB529A18D3A83E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=4