Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation
低能量He离子注入局域寿命控制LIGBT的实验研究(英文)

A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p -n junction,even in p anode.The results s how for the first time,helium ions,which stop in the p anode,also contribute to the forward voltage drop increasing and turn-off time reducing.