%0 Journal Article
%T Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation<br>低能量He离子注入局域寿命控制LIGBT的实验研究(英文)
%A Fang Jian
%A Tang Xinwei
%A Li Zhaoji
%A Zhang Bo
%A <br>方健
%A 唐新伟
%A 李肇基
%A 张波
%J 半导体学报
%D 2004
%I 
%X A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p -n junction,even in p anode.The results s how for the first time,helium ions,which stop in the p anode,also contribute to the forward voltage drop increasing and turn-off time reducing.
%K LIGBT
%K localized lifetime control
%K helium ion implantation<br>LIGBT
%K 局域寿命控制
%K He离子注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F500CEDE57B05677&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=94D812A784CFA7CC&eid=1A775ABEB80E436B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=12