Simulation of Forward Voltage Drop in 6000 V Thyristors
6000伏晶闸管正向压降的计算机模拟

Some basic considerations on simulation of the forward voltage drop in 6000 V thyristorsare presented.A corrected model for lifetimes of minority carriers in different parts ofthyristor is suggested in response to heavy doping and high injection. The physical mechanismand processing factors to be responsible for forward voltage drop are discussed based on thesimulation results.