%0 Journal Article
%T Simulation of Forward Voltage Drop in 6000 V Thyristors<br>6000伏晶闸管正向压降的计算机模拟
%A Chen Zhiming/Shaanxi Institute of Mechanical Engineering
%A Zhao Xudong/Shaanxi Institute of Mechanical Engineering
%A Gao Yong/Shaanxi Institute of Mechanical Engineering
%A Wang Zhengming/Xi''''an Institute of Power Electronic Technology
%A <br>陈治明
%A 赵旭东
%A 高勇
%A 王正鸣
%J 半导体学报
%D 1990
%I 
%X Some basic considerations on simulation of the forward voltage drop in 6000 V thyristorsare presented.A corrected model for lifetimes of minority carriers in different parts ofthyristor is suggested in response to heavy doping and high injection. The physical mechanismand processing factors to be responsible for forward voltage drop are discussed based on thesimulation results.
%K Thyristor
%K Forward voltage drop
%K Computer simulation<br>晶闸管
%K 正向降压
%K 计算机模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B32E4ACC89EB1789&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=94C357A881DFC066&sid=869B6F3117981EC4&eid=5F8BAECF36EB55E2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1