Back-Gating Effect of GaAs MESFET on Undoped SI-GaAs
半绝缘非掺GaAs材料制备的MESFETs背栅效应

The back\|gating effecs with different distances between back\|gate and source on undoped SI\|GaAs MESFET using two different isolation processes have been studied based on the design and measurement domand.It was found that the back\|gating of GaAs MESFET using boron implantation for isolation has less influence than that using SI\|GaAs substrate for isolation. The results also present evidence that the effects of the back\|gating reduce with the increasing of the distance of the back\|gate and MESFET for both process,and the threshold voltage increases much faster with the increasing of the distance of the back\|gate and MESFET when adjacent devices are isolated by boron implantation.