%0 Journal Article
%T Back-Gating Effect of GaAs MESFET on Undoped SI-GaAs<br>半绝缘非掺GaAs材料制备的MESFETs背栅效应
%A LIU Ru
%A |ping
%A XIA Guan
%A |qun
%A ZHAO Jianlong
%A WENG Jian
%A |hua
%A ZHANG Mei
%A |sheng
%A HAO You
%A |sheng
%A <br>刘汝萍
%A 夏冠群
%A 赵建龙
%A 翁建华
%A 张美圣
%A 郝幼申
%J 半导体学报
%D 2000
%I 
%X The back\|gating effecs with different distances between back\|gate and source on undoped SI\|GaAs MESFET using two different isolation processes have been studied based on the design and measurement domand.It was found that the back\|gating of GaAs MESFET using boron implantation for isolation has less influence than that using SI\|GaAs substrate for isolation. The results also present evidence that the effects of the back\|gating reduce with the increasing of the distance of the back\|gate and MESFET for both process,and the threshold voltage increases much faster with the increasing of the distance of the back\|gate and MESFET when adjacent devices are isolated by boron implantation.
%K MESFET
%K Bach\|Gating Effect
%K GaAs<br>MESFET
%K 背栅效应
%K GaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C8E83DCA490F5CDF&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=0401E2DB1F51F8DE&eid=68D88C2FCF9C3098&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5