Surface Passivation of Porous Silicon by SiOx and A12O3 Films
经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性

Bright and stable photoluminescence from porous silicon samples immersed in AlCl\-3+C\-2H\-5OH+H\-2O solution under a certain bias voltage has been obtained. FTIR spectra show that the enhancement and stabilization of the photoluminescence from the treated porous silicon are due to the formation of SiO_x and Al_2O_3 films on the treated sample surfaces.