%0 Journal Article %T Surface Passivation of Porous Silicon by SiOx and A12O3 Films
经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性 %A LIU Xiao %A |bing %A XIONG Zu %A |hong %A SHI Xiang %A |hua %A YUAN Shuai %A LIAO Liang %A |sheng %A
刘小兵 %A 熊祖洪 %A 史向华 %A 袁帅 %A 廖良生 %J 半导体学报 %D 2000 %I %X Bright and stable photoluminescence from porous silicon samples immersed in AlCl\-3+C\-2H\-5OH+H\-2O solution under a certain bias voltage has been obtained. FTIR spectra show that the enhancement and stabilization of the photoluminescence from the treated porous silicon are due to the formation of SiO_x and Al_2O_3 films on the treated sample surfaces. %K Porous Silicon %K PL %K Passivation %K Al\-2O\-3 %K SiO_x
多孔硅 %K 光致发光 %K 钝化 %K Al_2O_3 %K SiO_x %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EAAFD3DAAC3EF840&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=16D8618C6164A3ED&eid=BE33CC7147FEFCA4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=19