%0 Journal Article
%T Surface Passivation of Porous Silicon by SiOx and A12O3 Films
经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性
%A LIU Xiao
%A |bing
%A XIONG Zu
%A |hong
%A SHI Xiang
%A |hua
%A YUAN Shuai
%A LIAO Liang
%A |sheng
%A
刘小兵
%A 熊祖洪
%A 史向华
%A 袁帅
%A 廖良生
%J 半导体学报
%D 2000
%I
%X Bright and stable photoluminescence from porous silicon samples immersed in AlCl\-3+C\-2H\-5OH+H\-2O solution under a certain bias voltage has been obtained. FTIR spectra show that the enhancement and stabilization of the photoluminescence from the treated porous silicon are due to the formation of SiO_x and Al_2O_3 films on the treated sample surfaces.
%K Porous Silicon
%K PL
%K Passivation
%K Al\-2O\-3
%K SiO_x
多孔硅
%K 光致发光
%K 钝化
%K Al_2O_3
%K SiO_x
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EAAFD3DAAC3EF840&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=16D8618C6164A3ED&eid=BE33CC7147FEFCA4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=19