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OALib Journal期刊
ISSN: 2333-9721
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Effect of Nitrogen Ion Implantation on Characteristics of GaAs Schottky Barriers
氮离子注入对GaAs肖特基势垒性能影响的研究

Keywords: Nitrogen ion implantation,GaAs,Schottky barrier
氮离子注入,GaAs,肖特基势垒

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Abstract:

Nitrogen ions are implanted into GaAs substrate with different doses. The experimentalresults show that the characteristics of Ti/n-GaAs Schottky barriers are improved, distinctly.

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