%0 Journal Article
%T Effect of Nitrogen Ion Implantation on Characteristics of GaAs Schottky Barriers<br>氮离子注入对GaAs肖特基势垒性能影响的研究
%A Zhang Lichun/Institute of Microelectronics
%A Peking UniversityGao Yuzhi/Institute of Microelectronics
%A Peking UniversityNing Baojun/Institute of Microelectronics
%A Peking UniversityZhang Lu/Institute of Microelectronics
%A Peking UniversityWang Yangyuan/Institute of Microelectronics
%A Peking University
%A <br>张利春
%A 高玉芝
%A 宁宝俊
%A 张录
%A 王阳元
%J 半导体学报
%D 1990
%I 
%X Nitrogen ions are implanted into GaAs substrate with different doses. The experimentalresults show that the characteristics of Ti/n-GaAs Schottky barriers are improved, distinctly.
%K Nitrogen ion implantation
%K GaAs
%K Schottky barrier<br>氮离子注入
%K GaAs
%K 肖特基势垒
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0AA0321BD478AEFC&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=7EEA6F8DDD9FAD6E&eid=20154CF366EC08B1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4