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半导体学报 1990
Resonace and Anti-Resonace of Raman Scattering in Ga_(1-x)Al_xAs
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Abstract:
This paper has mainly studied the resonant behaviour of multi-order Raman spectra inGa_(1-x)Al_xAs at different temperatures.The physical mechanism about the enhancement of thesecond and the higher order Raman scattering is analysed, and a new evidence for the possibleintermediate state of Raman scattering-an exciton-LO phonon complex is given.Also,the anti-resonant phenomenon of TO-phonon unde(?) near-resonant condition has been discussedby analysing scattering tensors.