%0 Journal Article
%T Resonace and Anti-Resonace of Raman Scattering in Ga_(1-x)Al_xAs<br>Ga_(1-x)Al_xAs Raman散射的共振和反共振
%A Wang Xiaojun/Changchun Institute of Physics
%A Chinese Academy of Sciences
%A ChangchunZhang Xinyi/Changchun Institute of Physics
%A Chinese Academy of Sciences
%A Changchun
%A <br>王笑军
%A 张新夷
%J 半导体学报
%D 1990
%I 
%X This paper has mainly studied the resonant behaviour of multi-order Raman spectra inGa_(1-x)Al_xAs at different temperatures.The physical mechanism about the enhancement of thesecond and the higher order Raman scattering is analysed, and a new evidence for the possibleintermediate state of Raman scattering-an exciton-LO phonon complex is given.Also,the anti-resonant phenomenon of TO-phonon unde(?) near-resonant condition has been discussedby analysing scattering tensors.
%K Raman scattering
%K Raman replica
%K Anti-resonance<br>GaAlAs
%K 喇曼散射
%K 共振
%K 反共振
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F38FF2D6B02E5FA22F4&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=38B194292C032A66&sid=5BC9492E1D772407&eid=7EBE588F611589FC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3