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半导体学报 2001
High Quality InGaAsP MQW by Selective Area Growth
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Abstract:
The high quality 755nm wide wavelength range InGaAsP MQW,which is grown on SiO_2 masked InP substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE)is reported.By changing the growth temperature and growth pressure,peaks of MQW PL spectra vary from 1546nm to 1621nm.MQWs grown at different temperatures have the similar PL intensity and FWHM.A single ridge waveguide electroabsorption modulated DFB laser (DFB EML) is also fabricated with high quality MQW materials.
