%0 Journal Article
%T High Quality InGaAsP MQW by Selective Area Growth<br>选择区域生长高质量InGaAsP多量子阱材料
%A LIU Guo-li
%A WANG Wei
%A ZHANG Bai-jun
%A XU Guo-yang
%A CHEN Wei-xi
%A YE Xiao-ling
%A ZHANG Jing-yuan
%A WANG Xiao-jie
%A ZHU Hong-liang
%A <br>刘国利
%A 王圩
%A 张佰君
%A 许国阳
%A 陈娓兮
%A 叶小玲
%A 张静媛
%A 汪孝杰
%A 朱洪亮
%J 半导体学报
%D 2001
%I 
%X The high quality 755nm wide wavelength range InGaAsP MQW,which is grown on SiO_2 masked InP substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE)is reported.By changing the growth temperature and growth pressure,peaks of MQW PL spectra vary from 1546nm to 1621nm.MQWs grown at different temperatures have the similar PL intensity and FWHM.A single ridge waveguide electroabsorption modulated DFB laser (DFB EML) is also fabricated with high quality MQW materials.
%K selective area growth
%K LP-MOCVD
%K InGaAsP
%K MQW
%K EML<br>选择区域生长
%K LP-MOCVD
%K InGaAsP
%K 多量子阱
%K EML
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F636314CD2DD7EF3&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=94C357A881DFC066&sid=5568599C60D4BE87&eid=EF9E84B2DA79FF23&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=14