GaAs/AlGaAs DH Lasers on Si-GaAs Single Crystal Substrate Grown in Space
空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器

We have success fully fabricated GaAs/AlGaAs DH lasers with cw operation at room temperature for the first time on the Si-GaAs single crystal substrate grown in Chinese satellite in space. The GaAs/AlGaAs double heterostructure epilayers were grown by LPE, the geometry of stripe structure was formed by proton bombardment. The lowest threshold current of the laser is 20 mA, wavelength 857 nm, output power up to 30 mW.