%0 Journal Article
%T GaAs/AlGaAs DH Lasers on Si-GaAs Single Crystal Substrate Grown in Space<br>空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器
%A Shi Zhiwen/Institute of Semiconductors
%A Academia Sinica
%A Beijing Luo Liping/Institute of Semiconductors
%A Academia Sinica
%A Beijing Lin Lanying/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>石志文
%A 罗丽萍
%A 林兰英
%J 半导体学报
%D 1990
%I 
%X We have success fully fabricated GaAs/AlGaAs DH lasers with cw operation at room temperature for the first time on the Si-GaAs single crystal substrate grown in Chinese satellite in space. The GaAs/AlGaAs double heterostructure epilayers were grown by LPE, the geometry of stripe structure was formed by proton bombardment. The lowest threshold current of the laser is 20 mA, wavelength 857 nm, output power up to 30 mW.
%K GaAs
%K Single crystal
%K Grown in space
%K Laser<br>激光器
%K GaAS单晶
%K 空间生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8020BCEB335440D4&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=FC6FCA5A7559F1FB&eid=B3645A659773B73C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7