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半导体学报 1990
Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering
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Abstract:
The mobility of holes in amorphous CoMnNiO film is calculated from the measurement of do conductivity and thermo-emf of the film in the temperature range of 200-300 K. The results show that the mobility of holes at 330 K is of 1.25cm~2v~(-1)s~(-1)and thermally activated. It is concluded that band tail hopping conduction in amorphous CoMnNiO film will occur at 300 K.