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Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering
射频溅射CoMnNiO非晶薄膜中空穴的迁移率

Keywords: Amorphous Film,Thermopower,Mobility
CoMnNio
,非晶薄膜,热电动势,迁移率

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Abstract:

The mobility of holes in amorphous CoMnNiO film is calculated from the measurement of do conductivity and thermo-emf of the film in the temperature range of 200-300 K. The results show that the mobility of holes at 330 K is of 1.25cm~2v~(-1)s~(-1)and thermally activated. It is concluded that band tail hopping conduction in amorphous CoMnNiO film will occur at 300 K.

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