%0 Journal Article
%T Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering<br>射频溅射CoMnNiO非晶薄膜中空穴的迁移率
%A Tao Mingde/Xinjiang Institute of Physics
%A Academia Sinica
%A Urumqi Tan Hui/Xinjiang Institute of Physics
%A Academia Sinica
%A Urumqi Qin Dong/Xinjiang Institute of Physics
%A Academia Sinica
%A Urumqi Han Ying/Xinjiang Institute of Physics
%A Academia Sinica
%A Urumqi
%A <br>陶明德
%A 谭辉
%A 秦东
%A 韩英
%J 半导体学报
%D 1990
%I 
%X The mobility of holes in amorphous CoMnNiO film is calculated from the measurement of do conductivity and thermo-emf of the film in the temperature range of 200-300 K. The results show that the mobility of holes at 330 K is of 1.25cm~2v~(-1)s~(-1)and thermally activated. It is concluded that band tail hopping conduction in amorphous CoMnNiO film will occur at 300 K.
%K Amorphous Film
%K Thermopower
%K Mobility<br>CoMnNio
%K 非晶薄膜
%K 热电动势
%K 迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2046A21A3727CAF9&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=CFBDB06850C21CC6&eid=7B927C26AC9ED104&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1