Photocurrent Measurement of Si1-xGex/SiMultiple Quantum Wells With Ion Implantation and Thermal Annealing
Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing

Si Ge interdiffusion in Si 1- x Ge x /Si multiple quantum wells (MQW) is investigated by photocurrent spectroscopy, which is induced by ion implantation of Si\++ and thermal annealing. The band gap energy of the Si 1- x Ge x /Si samples implanted plus annealed has a blue shift up to 97meV compared to the annealed\|only samples. The blue shift may be caused by the Si\|Ge interdiffusion and the relaxation of the SiGe quantum wells.