%0 Journal Article
%T Photocurrent Measurement of Si1-xGex/SiMultiple Quantum Wells With Ion Implantation and Thermal Annealing<br>Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing
%A LI Cheng
%A <br>李成
%A 杨沁清
%A 王红杰
%A 罗丽萍
%A 成步文
%A 余金中
%A 王启明
%J 半导体学报
%D 2000
%I 
%X Si Ge interdiffusion in Si 1- x Ge x /Si multiple quantum wells (MQW) is investigated by photocurrent spectroscopy, which is induced by ion implantation of Si\++ and thermal annealing. The band gap energy of the Si 1- x Ge x /Si samples implanted plus annealed has a blue shift up to 97meV compared to the annealed\|only samples. The blue shift may be caused by the Si\|Ge interdiffusion and the relaxation of the SiGe quantum wells.
%K Photocurrent Measurement
%K SiGe
%K MQW
%K Ion Implantation
%K Thermal Annealing<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1035BBCE2689647F&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=13553B2D12F347E8&eid=659D3B06EBF534A7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13