Accurate Analysis of Thin-Film SOI-LDMOS Combined with Resistive-Field-Plate
具有电阻场板的薄膜SOI-LDMOS的精确解析

Accurate analytical design of thin-film SOI-LDMOS combined with resistive-field-plate is proposed.A new ionization rate model and the accurate route of the integral of it are achieved,which lead to an analytical result relating the breakdown voltage,impurity concentration and length of drift region to material parameters such as thickness of silicon layer and buried oxide.The analytical results are in good agreement with the numerical results achieved by the simulation tool TMA/MEDICI.By using this analytical theory,a much low specific on-resistance and high breakdown voltage LDMOS can be realized on the thin-film SOI substrate.