%0 Journal Article
%T Accurate Analysis of Thin-Film SOI-LDMOS Combined with Resistive-Field-Plate<br>具有电阻场板的薄膜SOI-LDMOS的精确解析
%A Yang Hongqiang
%A Guo Lina
%A Guo Chao
%A Han Lei
%A Chen Xingbi
%A <br>杨洪强
%A 郭丽娜
%A 郭超
%A 韩磊
%A 陈星弼
%J 半导体学报
%D 2003
%I 
%X Accurate analytical design of thin-film SOI-LDMOS combined with resistive-field-plate is proposed.A new ionization rate model and the accurate route of the integral of it are achieved,which lead to an analytical result relating the breakdown voltage,impurity concentration and length of drift region to material parameters such as thickness of silicon layer and buried oxide.The analytical results are in good agreement with the numerical results achieved by the simulation tool TMA/MEDICI.By using this analytical theory,a much low specific on-resistance and high breakdown voltage LDMOS can be realized on the thin-film SOI substrate.
%K silicon-on-insulator
%K resistive field plate
%K lateral double diffusion MOS
%K buried oxide
%K ionization rate
%K breakdown voltage
%K specific on-resistance<br>SOI
%K 电阻场板
%K 横向双扩散MOS管
%K 埋氧层
%K 电离率
%K 击穿电压
%K 比导通电阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=164EEFE6B27839D5&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=9CF7A0430CBB2DFD&sid=1BE4748776BF02C4&eid=7D89C25BE291E00C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=14