Design and Fabrication of K-Band Double Bridge Capacitive MEMS Switches
一种K波段双桥电容式RF MEMS开关的设计与制作

Design and fabrication of a novel K-band capacitive RF MEMS switch are reported.The switch consists of two suspended metallic membranes supported by a serpentine flexible spring over a coplanar waveguide.The design,which is realized with commercial EDA tools,is optimized based on a series of simulations.The simulations show that the proposed switch structure presents improved isolation in a relatively low RF frequency (K band).This switch is made using a silicon surface micromachining process.On wafer measurement is carried out.The threshold voltage is less than 19.5V,the insertion loss is 1.6dB@19.6GHz,and the isolation is 46.0dB@19.6GHz.