%0 Journal Article
%T Design and Fabrication of K-Band Double Bridge Capacitive MEMS Switches<br>一种K波段双桥电容式RF MEMS开关的设计与制作
%A Lei Xiaofeng
%A LIU Zewen
%A XUAN Yun
%A WEI Jia
%A LI Zhijian
%A Liu Litian
%A <br>雷啸锋
%A 刘泽文
%A 宣云
%A 韦嘉
%A 李志坚
%A 刘理天
%J 半导体学报
%D 2005
%I 
%X Design and fabrication of a novel K-band capacitive RF MEMS switch are reported.The switch consists of two suspended metallic membranes supported by a serpentine flexible spring over a coplanar waveguide.The design,which is realized with commercial EDA tools,is optimized based on a series of simulations.The simulations show that the proposed switch structure presents improved isolation in a relatively low RF frequency (K band).This switch is made using a silicon surface micromachining process.On wafer measurement is carried out.The threshold voltage is less than 19.5V,the insertion loss is 1.6dB@19.6GHz,and the isolation is 46.0dB@19.6GHz.
%K RF MEMS
%K switch
%K double bridge
%K high isolation<br>RF
%K MEMS
%K 开关
%K 双桥结构
%K 高隔离度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=23956C8D4C64A129&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=DF92D298D3FF1E6E&sid=70628C01DA910FB5&eid=6EAE3EAEEC5D0463&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=11